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| HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications The HMC849LP4CE is ideal for: * Cellular/4G Infrastructure * WiMAX, WiBro & Fixed Wireless * Automotive Telematics * Mobile Radio * Test Equipment Features High Isolation: up to 60 dB Single Positive Control: 0/+3V to +5V High Input IP3: +52 dBm Non-Reflective Design "All Off" State 24 Lead 4x4 mm QFN Package: 16 mm2 Functional Diagram General Description The HMC849LP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state. 11 SWITCHES - SPDT - SMT Electrical Specifi cations, TA = +25 C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System Parameter Insertion Loss Frequency DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz +3V +5V 0.35 - 4.0 GHz DC - 6.0 GHz 29 34 53 48 40 Min. Typ. 0.8 1.0 1.7 60 55 52 17 13 15 30 35 52 Max. 1.3 1.5 2.5 Units dB dB dB dB dB dB dB dBm dBm dBm Isolation (RFC to RF1/RF2) Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 4.0 GHz 80 150 ns ns 11 - 238 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Insertion Loss 0 Return Loss [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 RFC RF1, RF2 ON RF1, RF2 OFF INSERTION LOSS (dB) -1 -2 -3 +25C +85C -40C -4 -5 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 FREQUENCY (GHz) Isolation Between Ports RFC and RF1 / RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz) RF1 RF2 ALL OFF Isolation Between Ports RF1 and RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz) RFC-RF1 ON RFC-RF2 ON 11 SWITCHES - SPDT - SMT 11 - 239 0.1 and 1 dB Input Compression Point, Vdd = 5V 38 INPUT COMPRESSION (dBm) 36 34 32 30 28 26 24 0 1 2 3 4 5 6 FREQUENCY (GHz) 0.1 dB Compression Point 1dB Compression Point 0.1 and 1 dB Input Compression Point, Vdd = 3V 34 INPUT COMPRESSION (dBm) 32 30 28 26 24 22 20 0 1 2 3 4 5 6 FREQUENCY (GHz) 0.1 dB Compression Point 1dB Compression Point [1] RFC is reflective in "all off" state. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Input Third Order Intercept Point, Vdd = 5V 68 64 60 IP3 (dBm) 56 52 48 44 40 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C Input Third Order Intercept Point, Vdd = 3V 68 64 60 IP3 (dBm) 56 52 48 44 40 0 1 2 3 4 5 6 FREQUENCY (GHz) +25C +85C -40C 11 SWITCHES - SPDT - SMT Absolute Maximum Ratings Bias Voltage (Vdd) Control Voltage (Vctl, EN) RF Input Power * Through Path 3V/5V Termination Path 3V/5V Channel Temperature Continuous Pdiss (T = 85 C) (derate 17.6 mW/C for through path, and 6.8 mW/C for termination path above 85 C) Through Path Termination Path Thermal Resistance (channel to package bottom) Through Path Termination Path Storage Temperature Operating Temperature ESD Sensitivity (HBM) 56.8 C/W 147.3 C/W -65 to +150 C 30.60 / 33 dBm 26.4 dBm 150 C 7V -1V to Vdd +1V Bias Voltage & Current Vdd (V) 3 5 Idd (Typ.) (mA) 0.80 0.85 Digital Control Voltages State 1.144 W 0.441 W Low High Bias Condition 0 to +0.8 Vdc @ <1 A Typical +2.0 to +5.0 Vdc @ 30 A Typical Truth Table Control Input Signal Path State EN Low Low High High RFC - RF1 OFF ON OFF OFF RFC - RF2 ON OFF OFF OFF Vctl Low High Low High -40 to +85 C Class 1A * The RF input power is quite lower than the breakdown power levels. Hence, the only concern with this product is the thermal limit. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 - 240 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Outline Drawing 11 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC849LP4CE Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H849 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 241 SWITCHES - SPDT - SMT NOTES: HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Pin Descriptions Pin Number 1 Function Vdd Description Supply Voltage. Interface Schematic 2 Vctl Control input. See truth and control voltage tables. 3, 9, 12 RFC, RF1, RF2 These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 4, 6, 7, 8, 13, 14, 15, 16 N/C 11 SWITCHES - SPDT - SMT 5 EN Enable. See truth and control voltage tables. 10, 11 GND Package bottom must also be connected to PCB RF ground. Application Circuit 11 - 242 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Evaluation PCB 11 SWITCHES - SPDT - SMT 11 - 243 List of Materials for Evaluation PCB 106975 [1] Item J1 - J3 J4 - J8 C1 - C4 U1 PCB [2] Description PC Mount SMA RF Connector DC Pin 100 Capacitor, 0402 Pkg. HMC849LP4CE SPDT Switch 106965 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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